Global Automotive-grade SiC Devices (Discrete) Market Strategic Research Report

Scope of the Report

The global Automotive-grade SiC Devices (Discrete) market size is predicted to grow from US$ 1,561 million in 2025 to US$ 7,024 million in 2032; it is expected to grow at a CAGR of 24.4% from 2026 to 2032.

This report studies the Automotive-grade SiC Devices (Discrete), key segments cover SiC MOSFET discrete, SiC Schottky Barrier Diodes discrete, SiC FETs, SiC JFETs etc., used in EV Main Inverter (Electric Traction), OBC and DC/DC.

The key players of SiC MOSFET modules are STMicroelectronics, Infineon, Wolfspeed, Rohm, Onsemi, BYD Semiconductor, Microchip (Microsemi), Mitsubishi Electric (Vincotech) and Semikron Danfoss, etc. The top three players hold a share over 70 percent. The key players of SiC MOSFET Discrete are STMicroelectronics, Infineon, Wolfspeed, Rohm, and CETC 55, etc. The top five players hold a share over 80 percent. The key players of SiC SBD are STMicroelectronics, Infineon, Wolfspeed, Rohm, onsemi, Microchip (Microsemi), and San'an Optoelectronics, etc. The top five players hold a share over 70 percent. Automotive is the largest market, hold a share over 65%, mainly used in OBC, DC/DC Converter, etc.

Global new energy vehicles continue to grow rapidly. In 2023, the total sales of new energy vehicles in the world reached 14.65 million, a simultaneous increase of 35.4%. Among them, China's new energy vehicle sales reached 9.495 million, accounting for 64.8% of global sales. The production and sales of new energy vehicles have ranked first in the world for eight consecutive years. In 2023, the sales of new energy vehicles in the United States and Europe were 2.94 million and 1.46 million respectively, with year-on-year growth rates of 18.3% and 48.0% respectively.

Key Questions Addressed in this Report

What is the 10-year outlook for the global Automotive-grade SiC Devices (Discrete) market?

What factors are driving Automotive-grade SiC Devices (Discrete) market growth, globally and by region?

Which technologies are poised for the fastest growth by market and region?

How do Automotive-grade SiC Devices (Discrete) market opportunities vary by end market size?

How does Automotive-grade SiC Devices (Discrete) break out by Type, by Application?

This report presents a comprehensive overview of the global Automotive-grade SiC Devices (Discrete) market, covering market size and forecast, segmentation by product type and application, competitive landscape, leading players and regional and country-level outlook.

Segment by Type

• SiC MOSFET Discrete
• SiC Diode Discrete (SiC SBD)

Segment by Application

• Main Inverter (Electric Traction)
• OBC
• DC/DC Converter for EV/HEV

Who Can Use This Report?

This report is written for decision-makers who need a clear, data-backed view of the global Automotive-grade SiC Devices (Discrete) market:

• Manufacturers, suppliers and solution providers benchmarking their position and planning product, capacity and go-to-market strategy
• Distributors, channel partners and end users in Main Inverter (Electric Traction), OBC, DC/DC Converter for EV/HEV evaluating demand and sourcing options
• Investors, financial analysts and consultants assessing growth opportunities, competitive dynamics and M&A potential
• Government agencies, industry associations and research institutions tracking industry developments and policy impact